On restoring the original semiconducting properties of n-GaP after neutron activation

For performing radiochemical photocorrosion measurements in aqueous electrolytes, n‐GaP samples are irradiated with thermal neutrons (neutron doses 1.8 ×1017 and 1.8 × 1017 n cm−2). The neutron irradiation induces defects that drastically alter the semiconducting properties. By annealing the samples...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1995-04, Vol.148 (2), p.407-412
Hauptverfasser:	Heckner, K.-H., Majoros, G., Kraft, A., Landsberg, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics Semiconductor-electrolyte contacts
Online-Zugang:	Volltext
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