On restoring the original semiconducting properties of n-GaP after neutron activation
For performing radiochemical photocorrosion measurements in aqueous electrolytes, n‐GaP samples are irradiated with thermal neutrons (neutron doses 1.8 ×1017 and 1.8 × 1017 n cm−2). The neutron irradiation induces defects that drastically alter the semiconducting properties. By annealing the samples...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1995-04, Vol.148 (2), p.407-412 |
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| container_title | Physica status solidi. A, Applied research |
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| creator | Heckner, K.-H. Majoros, G. Kraft, A. Landsberg, R. |
| description | For performing radiochemical photocorrosion measurements in aqueous electrolytes, n‐GaP samples are irradiated with thermal neutrons (neutron doses 1.8 ×1017 and 1.8 × 1017 n cm−2). The neutron irradiation induces defects that drastically alter the semiconducting properties. By annealing the samples (700 °C) it is possible to annihilate these defects and to restore the original semiconducting and electrochemical properties. This process is investigated by the Mott‐Schottky evaluation of electrochemical capacitance‐voltage measurements.
Zur Durchführung von radiochemischen Korrosionsuntersuchungen in wäßrigen Elektrolyten werden n‐GaP‐Elektroden mit thermischen Neutronen bestrahlt (Neutronendosis 1,8 × 1017 bzw. 1,8 × 1018 n cm−2). Die durch die Neutronenbestrahlung induzierten Defekte führen zu drastischen Änderungen der Halbleitereigenschaften. Durch Temperung der Proben (700 °C) ist es möglich, diese Defekte zu beseitigen und die ursprünglichen halbleitenden und elektrochemischen Eigenschaften wieder herzustellen. Dieser Vorgang wird mit Hilfe der Mott‐Schottky‐Auswertung von elektrochemischen Kapazitäts‐Spannungsmessungen untersucht. |
| doi_str_mv | 10.1002/pssa.2211480208 |
| format | Article |
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Zur Durchführung von radiochemischen Korrosionsuntersuchungen in wäßrigen Elektrolyten werden n‐GaP‐Elektroden mit thermischen Neutronen bestrahlt (Neutronendosis 1,8 × 1017 bzw. 1,8 × 1018 n cm−2). Die durch die Neutronenbestrahlung induzierten Defekte führen zu drastischen Änderungen der Halbleitereigenschaften. Durch Temperung der Proben (700 °C) ist es möglich, diese Defekte zu beseitigen und die ursprünglichen halbleitenden und elektrochemischen Eigenschaften wieder herzustellen. Dieser Vorgang wird mit Hilfe der Mott‐Schottky‐Auswertung von elektrochemischen Kapazitäts‐Spannungsmessungen untersucht.</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.2211480208</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Physics ; Semiconductor-electrolyte contacts</subject><ispartof>Physica status solidi. A, Applied research, 1995-04, Vol.148 (2), p.407-412</ispartof><rights>Copyright © 1995 WILEY‐VCH Verlag GmbH & Co. KGaA</rights><rights>1995 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3208-6e88f385e3b711fb8eecd0f26534c7009da75106f07aeee7096d151fe787f8eb3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.2211480208$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.2211480208$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3490207$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Heckner, K.-H.</creatorcontrib><creatorcontrib>Majoros, G.</creatorcontrib><creatorcontrib>Kraft, A.</creatorcontrib><creatorcontrib>Landsberg, R.</creatorcontrib><title>On restoring the original semiconducting properties of n-GaP after neutron activation</title><title>Physica status solidi. A, Applied research</title><addtitle>phys. stat. sol. (a)</addtitle><description>For performing radiochemical photocorrosion measurements in aqueous electrolytes, n‐GaP samples are irradiated with thermal neutrons (neutron doses 1.8 ×1017 and 1.8 × 1017 n cm−2). The neutron irradiation induces defects that drastically alter the semiconducting properties. By annealing the samples (700 °C) it is possible to annihilate these defects and to restore the original semiconducting and electrochemical properties. This process is investigated by the Mott‐Schottky evaluation of electrochemical capacitance‐voltage measurements.
Zur Durchführung von radiochemischen Korrosionsuntersuchungen in wäßrigen Elektrolyten werden n‐GaP‐Elektroden mit thermischen Neutronen bestrahlt (Neutronendosis 1,8 × 1017 bzw. 1,8 × 1018 n cm−2). Die durch die Neutronenbestrahlung induzierten Defekte führen zu drastischen Änderungen der Halbleitereigenschaften. Durch Temperung der Proben (700 °C) ist es möglich, diese Defekte zu beseitigen und die ursprünglichen halbleitenden und elektrochemischen Eigenschaften wieder herzustellen. Dieser Vorgang wird mit Hilfe der Mott‐Schottky‐Auswertung von elektrochemischen Kapazitäts‐Spannungsmessungen untersucht.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Semiconductor-electrolyte contacts</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNpFkNFPwjAQhxujiYg--9oHX4fXdVu7-ESIohEFg6hvTdmuWIVuaYfKf-8IBp_uLvf7LpePkHMGPQYQX9Yh6F4cM5ZIiEEekA5LYxbxPHs7JB0AziKZZ-kxOQnhAwASENAhs7GjHkNTeesWtHlH2nYL6_SSBlzZonLlumi2u9pXNfrGYqCVoS4a6gnVpkFPHa4bXzmq2-CXbmzlTsmR0cuAZ3-1S2Y318-D22g0Ht4N-qOo4O2LUYZSGi5T5HPBmJlLxKIEE2cpTwoBkJdapAwyA0IjooA8K1nKDAopjMQ575KL3d1ah0IvjdeusEHV3q603yie5K0K0caudrFvu8TNfs1Abc2prTn1b05NptP-_9jS0Y62ocGfPa39p8oEF6l6fRy2-EC-3D-AeuK_Y-51YQ</recordid><startdate>19950416</startdate><enddate>19950416</enddate><creator>Heckner, K.-H.</creator><creator>Majoros, G.</creator><creator>Kraft, A.</creator><creator>Landsberg, R.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope></search><sort><creationdate>19950416</creationdate><title>On restoring the original semiconducting properties of n-GaP after neutron activation</title><author>Heckner, K.-H. ; Majoros, G. ; Kraft, A. ; Landsberg, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3208-6e88f385e3b711fb8eecd0f26534c7009da75106f07aeee7096d151fe787f8eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Semiconductor-electrolyte contacts</topic><toplevel>online_resources</toplevel><creatorcontrib>Heckner, K.-H.</creatorcontrib><creatorcontrib>Majoros, G.</creatorcontrib><creatorcontrib>Kraft, A.</creatorcontrib><creatorcontrib>Landsberg, R.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Heckner, K.-H.</au><au>Majoros, G.</au><au>Kraft, A.</au><au>Landsberg, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On restoring the original semiconducting properties of n-GaP after neutron activation</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1995-04-16</date><risdate>1995</risdate><volume>148</volume><issue>2</issue><spage>407</spage><epage>412</epage><pages>407-412</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>For performing radiochemical photocorrosion measurements in aqueous electrolytes, n‐GaP samples are irradiated with thermal neutrons (neutron doses 1.8 ×1017 and 1.8 × 1017 n cm−2). The neutron irradiation induces defects that drastically alter the semiconducting properties. By annealing the samples (700 °C) it is possible to annihilate these defects and to restore the original semiconducting and electrochemical properties. This process is investigated by the Mott‐Schottky evaluation of electrochemical capacitance‐voltage measurements.
Zur Durchführung von radiochemischen Korrosionsuntersuchungen in wäßrigen Elektrolyten werden n‐GaP‐Elektroden mit thermischen Neutronen bestrahlt (Neutronendosis 1,8 × 1017 bzw. 1,8 × 1018 n cm−2). Die durch die Neutronenbestrahlung induzierten Defekte führen zu drastischen Änderungen der Halbleitereigenschaften. Durch Temperung der Proben (700 °C) ist es möglich, diese Defekte zu beseitigen und die ursprünglichen halbleitenden und elektrochemischen Eigenschaften wieder herzustellen. Dieser Vorgang wird mit Hilfe der Mott‐Schottky‐Auswertung von elektrochemischen Kapazitäts‐Spannungsmessungen untersucht.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2211480208</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics Semiconductor-electrolyte contacts |
| title | On restoring the original semiconducting properties of n-GaP after neutron activation |
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