Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design

Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design

A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and substantial savings in CPU execution speed over existin...

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Veröffentlicht in:IEEE transactions on computer-aided design of integrated circuits and systems 1994-12, Vol.13 (12), p.1489-1497
Hauptverfasser: Tellez, J.R., Mezher, K., Al-Daas, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance
Circuit simulation
Circuit synthesis
Computational modeling
Design. Technologies. Operation analysis. Testing
Electronics
Equations
Exact sciences and technology
Gallium arsenide
Integrated circuits
MESFETs
Microwave devices
Microwave theory and techniques
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Beschreibung
Zusammenfassung:A new equation for simulating the bias dependency of the gate-source and gate-drain capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy for microwave circuit design applications and substantial savings in CPU execution speed over existing techniques. The new empirical relation is applied successfully to a wide range of silicon and GaAs devices.< >
ISSN:0278-0070
1937-4151
DOI:10.1109/43.331406