Influence of Al content x on hot electron noise in AlxGA1-xAs n+nn+ devices : comparison with GaAs

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 1994, Vol.41 (11), p.2082-2086
Hauptverfasser:	DE MURCIA, M, RICHARD, E, VANBREMEERSCH, J, ZIMMERMANN, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Testing, measurement, noise and reliability
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	2086
container_issue	11
container_start_page	2082
container_title	IEEE transactions on electron devices
container_volume	41
creator	DE MURCIA, M RICHARD, E VANBREMEERSCH, J ZIMMERMANN, J
description
doi_str_mv	10.1109/16.333826
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_3341534</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3341534</sourcerecordid><originalsourceid>FETCH-LOGICAL-p97t-da3d8dd930c0d61df43363900a592868387f64026d7bc4b6fad6294ff900ffe13</originalsourceid><addsrcrecordid>eNotjE9LwzAchoMoWKcHv0EO3kZm0l-aJt7K0DoYeNl9pPnDIl1amqj121twp5cHnudF6JHRDWNUPTOxAQBZiitUsKqqiRJcXKOCUiaJAgm36C6lzwUF52WBul30_ZeLxuHB46bHZojZxYxnPER8GjJ2vTN5WiAOITkc4mLNbcPI3CQc1zGusXXfwbiEX5b6POoppEX_CfmEW92ke3TjdZ_cw2VX6PD2eti-k_1Hu9s2ezKqOhOrwUprFVBDrWDWcwABilJdqVIKCbL2gtNS2LozvBNeW1Eq7v2ieO8YrNDT_-2ok9G9n3Q0IR3HKZz19HsE4KwCDn8n01SJ</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of Al content x on hot electron noise in AlxGA1-xAs n+nn+ devices : comparison with GaAs</title><source>IEEE Electronic Library (IEL)</source><creator>DE MURCIA, M ; RICHARD, E ; VANBREMEERSCH, J ; ZIMMERMANN, J</creator><creatorcontrib>DE MURCIA, M ; RICHARD, E ; VANBREMEERSCH, J ; ZIMMERMANN, J</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.333826</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Testing, measurement, noise and reliability</subject><ispartof>IEEE transactions on electron devices, 1994, Vol.41 (11), p.2082-2086</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4021,27921,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3341534$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DE MURCIA, M</creatorcontrib><creatorcontrib>RICHARD, E</creatorcontrib><creatorcontrib>VANBREMEERSCH, J</creatorcontrib><creatorcontrib>ZIMMERMANN, J</creatorcontrib><title>Influence of Al content x on hot electron noise in AlxGA1-xAs n+nn+ devices : comparison with GaAs</title><title>IEEE transactions on electron devices</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Testing, measurement, noise and reliability</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNotjE9LwzAchoMoWKcHv0EO3kZm0l-aJt7K0DoYeNl9pPnDIl1amqj121twp5cHnudF6JHRDWNUPTOxAQBZiitUsKqqiRJcXKOCUiaJAgm36C6lzwUF52WBul30_ZeLxuHB46bHZojZxYxnPER8GjJ2vTN5WiAOITkc4mLNbcPI3CQc1zGusXXfwbiEX5b6POoppEX_CfmEW92ke3TjdZ_cw2VX6PD2eti-k_1Hu9s2ezKqOhOrwUprFVBDrWDWcwABilJdqVIKCbL2gtNS2LozvBNeW1Eq7v2ieO8YrNDT_-2ok9G9n3Q0IR3HKZz19HsE4KwCDn8n01SJ</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>DE MURCIA, M</creator><creator>RICHARD, E</creator><creator>VANBREMEERSCH, J</creator><creator>ZIMMERMANN, J</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>1994</creationdate><title>Influence of Al content x on hot electron noise in AlxGA1-xAs n+nn+ devices : comparison with GaAs</title><author>DE MURCIA, M ; RICHARD, E ; VANBREMEERSCH, J ; ZIMMERMANN, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p97t-da3d8dd930c0d61df43363900a592868387f64026d7bc4b6fad6294ff900ffe13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Testing, measurement, noise and reliability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DE MURCIA, M</creatorcontrib><creatorcontrib>RICHARD, E</creatorcontrib><creatorcontrib>VANBREMEERSCH, J</creatorcontrib><creatorcontrib>ZIMMERMANN, J</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DE MURCIA, M</au><au>RICHARD, E</au><au>VANBREMEERSCH, J</au><au>ZIMMERMANN, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Al content x on hot electron noise in AlxGA1-xAs n+nn+ devices : comparison with GaAs</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>1994</date><risdate>1994</risdate><volume>41</volume><issue>11</issue><spage>2082</spage><epage>2086</epage><pages>2082-2086</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/16.333826</doi><tpages>5</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0018-9383
ispartof	IEEE transactions on electron devices, 1994, Vol.41 (11), p.2082-2086
issn	0018-9383 1557-9646
language	eng
recordid	cdi_pascalfrancis_primary_3341534
source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electronics Exact sciences and technology Testing, measurement, noise and reliability
title	Influence of Al content x on hot electron noise in AlxGA1-xAs n+nn+ devices : comparison with GaAs
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T10%3A53%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20Al%20content%20x%20on%20hot%20electron%20noise%20in%20AlxGA1-xAs%20n+nn+%20devices%20:%20comparison%20with%20GaAs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=DE%20MURCIA,%20M&rft.date=1994&rft.volume=41&rft.issue=11&rft.spage=2082&rft.epage=2086&rft.pages=2082-2086&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.333826&rft_dat=%3Cpascalfrancis%3E3341534%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true