High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface

High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface

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Veröffentlicht in:Journal of crystal growth 1996, Vol.169 (1), p.40-50
Hauptverfasser: SOKOLOV, N. S, ALVAREZ, J. C, GASTEV, S. V, SHUSTERMAN, YU. V, TAKAHASHI, I, ITOH, Y, HARADA, J, OVERNEY, R. M
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container_issue 1
container_start_page 40
container_title Journal of crystal growth
container_volume 169
creator SOKOLOV, N. S
ALVAREZ, J. C
GASTEV, S. V
SHUSTERMAN, YU. V
TAKAHASHI, I
ITOH, Y
HARADA, J
OVERNEY, R. M
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title High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface
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