Growth and characterization of GaN layers on SiC substrates
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| creator | DMITRIEV, V IRVINE, K MUSIKHIN, YU BERT, N BULMAN, G EDMOND, J ZUBRILOV, A NIKOLAEV, V NIKITINA, I TSVETKOV, D BABANIN, A SITNIKOVA, A |
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| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1996, Vol.166 (1-4), p.601-606 |
| issn | 0022-0248 1873-5002 |
| language | rus |
| recordid | cdi_pascalfrancis_primary_3247161 |
| source | Access via ScienceDirect (Elsevier) |
| title | Growth and characterization of GaN layers on SiC substrates |
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