Substitution of InP layers to InAs for strain compensation in GaxIn1-xAs/InP superlattices

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 1996-07, Vol.164 (1-4), p.263-270
Hauptverfasser:	RONGEN, R. T. H, LEYS, M. R, VONK, H, WOLTER, J. H, OEI, Y. S
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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