Transient photocurrents under optical bias in time-of-flight experiment with amorphous films of As2Se3: Sn and As2S3: Sb2S3

Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of ternary glassy alloys As2Se3:Snx (x = 0 to 3.5 at%) and (1−y)(As2S3):y(Sb2S3) (y = 0 to 0.55) by the time‐of‐flight technique. In the frame of a multiple‐trapping model it is shown that by adding tin and Sb2S3 to the glass formers As2Se3 and As2Se3 respectively, the hole drift mobility is strongly increased (up to 200 times), while small amounts of tin (about 1 at%) hamper the recombination. Optical bias causes the drift mobility to increase many times with its activation energy being decreased. The obtained results indicate the variation in occupation of deep localized centres and explain the known effect of photosensitivity enhancement when ternary chalcogenide glassy alloys are used in layer structures for optical information storage. [Russian Text Ignored].