Simultaneous changes in the photoluminescence, infrared absorption and morphology of porous silicon during etching by HF
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Veröffentlicht in: | Semiconductor science and technology 1996-04, Vol.11 (4), p.601-606 |
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container_title | Semiconductor science and technology |
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creator | Gorbach, T Ya Rudko, G Yu Smertenko, P S Svechnikov, S V Valakh, M Ya Bondarenko, V P Dorofeev, A M |
description | |
doi_str_mv | 10.1088/0268-1242/11/4/024 |
format | Article |
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ispartof | Semiconductor science and technology, 1996-04, Vol.11 (4), p.601-606 |
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language | eng |
recordid | cdi_pascalfrancis_primary_3029409 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Elemental semiconductors Exact sciences and technology Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Structure of solids and liquids crystallography Surface cleaning, etching, patterning Surface treatments |
title | Simultaneous changes in the photoluminescence, infrared absorption and morphology of porous silicon during etching by HF |
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