Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 1995-12, Vol.157 (1-4), p.436-441 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 441 |
|---|---|
| container_issue | 1-4 |
| container_start_page | 436 |
| container_title | Journal of crystal growth |
| container_volume | 157 |
| creator | BOULMER, J BOUCAUD, P ROCA I CABARROCAS, P GUEDJ, C DEBARRE, D BOUCHIER, D FINKMAN, E PRAWER, S NUGENT, K DESMUR-LARRE, A GODET, C |
| description | |
| doi_str_mv | 10.1016/0022-0248(95)00362-2 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_2964666</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2964666</sourcerecordid><originalsourceid>FETCH-LOGICAL-p182t-1426c52936dce43c659bf2c49fc106405f1944d9bd73983c6019da0b1a36226a3</originalsourceid><addsrcrecordid>eNo9UM1KAzEQDqJgrb6Bhxw8tEjsJJtNG2-yaCsUBKvnkk2yNLI_YbMLXZ_HBzWLxdMw3-8wCN1SeKBAxQKAMQKMr2YynQMkghF2hiZ0tUxIGslzNPmXXKKrEL4Aoo_CBP28W1W6b9W5psZNgXeOkiMZ1vaYDYudwwfb2bYJXdvrrm9twPmAfV8Ga3Cpgm2xq02v42a969RxGDOye-wqX6q6i7gPtjdN1bT-4HSMX1tcuLIKWNVmFCsyYtnj5gQb65vgRmc8aOdmFGB-jS4KFTtvTnOKPl-eP7IN2b6tX7OnLfF0xTpCORM6ZTIRRlueaJHKvGCay0JTEBzSgkrOjczNMpGryAOVRkFOVfwYEyqZoru_XK-CVmXRqlq7sPetq1Q77JkUXAiR_AIufm5m</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)</title><source>Elsevier ScienceDirect Journals Complete</source><creator>BOULMER, J ; BOUCAUD, P ; ROCA I CABARROCAS, P ; GUEDJ, C ; DEBARRE, D ; BOUCHIER, D ; FINKMAN, E ; PRAWER, S ; NUGENT, K ; DESMUR-LARRE, A ; GODET, C</creator><creatorcontrib>BOULMER, J ; BOUCAUD, P ; ROCA I CABARROCAS, P ; GUEDJ, C ; DEBARRE, D ; BOUCHIER, D ; FINKMAN, E ; PRAWER, S ; NUGENT, K ; DESMUR-LARRE, A ; GODET, C</creatorcontrib><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/0022-0248(95)00362-2</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Journal of crystal growth, 1995-12, Vol.157 (1-4), p.436-441</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,776,780,785,786,23909,23910,25118,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2964666$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BOULMER, J</creatorcontrib><creatorcontrib>BOUCAUD, P</creatorcontrib><creatorcontrib>ROCA I CABARROCAS, P</creatorcontrib><creatorcontrib>GUEDJ, C</creatorcontrib><creatorcontrib>DEBARRE, D</creatorcontrib><creatorcontrib>BOUCHIER, D</creatorcontrib><creatorcontrib>FINKMAN, E</creatorcontrib><creatorcontrib>PRAWER, S</creatorcontrib><creatorcontrib>NUGENT, K</creatorcontrib><creatorcontrib>DESMUR-LARRE, A</creatorcontrib><creatorcontrib>GODET, C</creatorcontrib><title>Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)</title><title>Journal of crystal growth</title><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9UM1KAzEQDqJgrb6Bhxw8tEjsJJtNG2-yaCsUBKvnkk2yNLI_YbMLXZ_HBzWLxdMw3-8wCN1SeKBAxQKAMQKMr2YynQMkghF2hiZ0tUxIGslzNPmXXKKrEL4Aoo_CBP28W1W6b9W5psZNgXeOkiMZ1vaYDYudwwfb2bYJXdvrrm9twPmAfV8Ga3Cpgm2xq02v42a969RxGDOye-wqX6q6i7gPtjdN1bT-4HSMX1tcuLIKWNVmFCsyYtnj5gQb65vgRmc8aOdmFGB-jS4KFTtvTnOKPl-eP7IN2b6tX7OnLfF0xTpCORM6ZTIRRlueaJHKvGCay0JTEBzSgkrOjczNMpGryAOVRkFOVfwYEyqZoru_XK-CVmXRqlq7sPetq1Q77JkUXAiR_AIufm5m</recordid><startdate>19951202</startdate><enddate>19951202</enddate><creator>BOULMER, J</creator><creator>BOUCAUD, P</creator><creator>ROCA I CABARROCAS, P</creator><creator>GUEDJ, C</creator><creator>DEBARRE, D</creator><creator>BOUCHIER, D</creator><creator>FINKMAN, E</creator><creator>PRAWER, S</creator><creator>NUGENT, K</creator><creator>DESMUR-LARRE, A</creator><creator>GODET, C</creator><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>19951202</creationdate><title>Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)</title><author>BOULMER, J ; BOUCAUD, P ; ROCA I CABARROCAS, P ; GUEDJ, C ; DEBARRE, D ; BOUCHIER, D ; FINKMAN, E ; PRAWER, S ; NUGENT, K ; DESMUR-LARRE, A ; GODET, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p182t-1426c52936dce43c659bf2c49fc106405f1944d9bd73983c6019da0b1a36226a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BOULMER, J</creatorcontrib><creatorcontrib>BOUCAUD, P</creatorcontrib><creatorcontrib>ROCA I CABARROCAS, P</creatorcontrib><creatorcontrib>GUEDJ, C</creatorcontrib><creatorcontrib>DEBARRE, D</creatorcontrib><creatorcontrib>BOUCHIER, D</creatorcontrib><creatorcontrib>FINKMAN, E</creatorcontrib><creatorcontrib>PRAWER, S</creatorcontrib><creatorcontrib>NUGENT, K</creatorcontrib><creatorcontrib>DESMUR-LARRE, A</creatorcontrib><creatorcontrib>GODET, C</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BOULMER, J</au><au>BOUCAUD, P</au><au>ROCA I CABARROCAS, P</au><au>GUEDJ, C</au><au>DEBARRE, D</au><au>BOUCHIER, D</au><au>FINKMAN, E</au><au>PRAWER, S</au><au>NUGENT, K</au><au>DESMUR-LARRE, A</au><au>GODET, C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)</atitle><jtitle>Journal of crystal growth</jtitle><date>1995-12-02</date><risdate>1995</risdate><volume>157</volume><issue>1-4</issue><spage>436</spage><epage>441</epage><pages>436-441</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/0022-0248(95)00362-2</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1995-12, Vol.157 (1-4), p.436-441 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_2964666 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T05%3A34%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Realization%20of%20Si1-x-yGexCy/Si%20heterostructures%20by%20pulsed%20laser%20induced%20epitaxy%20of%20C+%20implanted%20pseudomorphic%20SiGe%20films%20and%20of%20a-SiGeC:H%20films%20deposited%20on%20Si(100)&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=BOULMER,%20J&rft.date=1995-12-02&rft.volume=157&rft.issue=1-4&rft.spage=436&rft.epage=441&rft.pages=436-441&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/0022-0248(95)00362-2&rft_dat=%3Cpascalfrancis%3E2964666%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |