Composition profiles versus growth pressure and temperature in epitaxial HgZnTe layers
A procedure for composition optimization of mercury zinc telluride (Hg1−xZnxTe) layers grown by isothermal vapor phase epitaxy (ISOVPE) is presented. A quantitative model of mercury zinc telluride ISOVPE growth is proposed. The model is valid for temperatures between 450 and 600 °C and for solid HgT...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1995-12, Vol.152 (2), p.451-459 |
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| container_issue | 2 |
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| container_title | Physica status solidi. A, Applied research |
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| creator | JAKSIC, Z DJURIC, Z DJINOVIC, Z PETROVIC, R |
| description | A procedure for composition optimization of mercury zinc telluride (Hg1−xZnxTe) layers grown by isothermal vapor phase epitaxy (ISOVPE) is presented. A quantitative model of mercury zinc telluride ISOVPE growth is proposed. The model is valid for temperatures between 450 and 600 °C and for solid HgTe source. A good agreement between experimental and calculated compositional profiles is obtained. Some peculiarities of the ISOVPE Hg1−xZnxTe layers were analyzed using the presented model. A theoretical and experimental method for engineering of homogeneous MZT samples is proposed. The presented procedure can be used to tailor MZT epitaxial layers with desired properties, suitable for fabrication of infrared devices. |
| doi_str_mv | 10.1002/pssa.2211520213 |
| format | Article |
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| ispartof | Physica status solidi. A, Applied research, 1995-12, Vol.152 (2), p.451-459 |
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| source | Access via Wiley Online Library |
| subjects | Composition and phase identification Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vapor phase epitaxy growth from vapor phase |
| title | Composition profiles versus growth pressure and temperature in epitaxial HgZnTe layers |
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