Composition profiles versus growth pressure and temperature in epitaxial HgZnTe layers
A procedure for composition optimization of mercury zinc telluride (Hg1−xZnxTe) layers grown by isothermal vapor phase epitaxy (ISOVPE) is presented. A quantitative model of mercury zinc telluride ISOVPE growth is proposed. The model is valid for temperatures between 450 and 600 °C and for solid HgT...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1995-12, Vol.152 (2), p.451-459 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A procedure for composition optimization of mercury zinc telluride (Hg1−xZnxTe) layers grown by isothermal vapor phase epitaxy (ISOVPE) is presented. A quantitative model of mercury zinc telluride ISOVPE growth is proposed. The model is valid for temperatures between 450 and 600 °C and for solid HgTe source. A good agreement between experimental and calculated compositional profiles is obtained. Some peculiarities of the ISOVPE Hg1−xZnxTe layers were analyzed using the presented model. A theoretical and experimental method for engineering of homogeneous MZT samples is proposed. The presented procedure can be used to tailor MZT epitaxial layers with desired properties, suitable for fabrication of infrared devices. |
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ISSN: | 0031-8965 1521-396X |
DOI: | 10.1002/pssa.2211520213 |