RF interference effects on PIN photodiodes

RF interference effects on PIN photodiodes

RFI effects on PIN diodes were studied experimentally for various light powers. It is shown that by operating a diode in a photovoltaic mode it is much more susceptible to RFI than by operating it in a photoconductive mode. The RF-frequency and RF-power dependences of the interference effect are ill...

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Veröffentlicht in:IEEE transactions on electromagnetic compatibility 1995-11, Vol.37 (4), p.589-592
Hauptverfasser: Liu, Cheng-Kuang, Chou, Cheng-Yie
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Diodes
Electromagnetic interference
Electron optics
Electronics
Exact sciences and technology
Lighting
Nonlinear optics
Optical distortion
Photoconductivity
PIN photodiodes
Radio frequency
Radiofrequency interference
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:RFI effects on PIN diodes were studied experimentally for various light powers. It is shown that by operating a diode in a photovoltaic mode it is much more susceptible to RFI than by operating it in a photoconductive mode. The RF-frequency and RF-power dependences of the interference effect are illustrated. A method of predicting the combined effects of light illumination and RFI is suggested. Methods of avoiding this interference are discussed.
ISSN:0018-9375
1558-187X
DOI:10.1109/15.477345