High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Owing to bulk-accumulation, dual-gate (DG) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates electrically tied together (DG-driving) exhibit 2.53 times higher ON-current and subthreshold voltage swing of ~ 180 mV/decade, which is 50% lower than that...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 2014-04, Vol.35 (4), p.461-463
Hauptverfasser:	Xiuling Li, Di Geng, Mativenga, Mallory, Jin Jang
Format:	Artikel
Sprache:	eng
Schlagworte:	a-IGZO TFTs Applied sciences Capacitance Circuit properties dual gate Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology inverter Inverters Logic gates Oscillators, resonators, synthetizers ring oscillator Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching circuits Thin film transistors Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Owing to bulk-accumulation, dual-gate (DG) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates electrically tied together (DG-driving) exhibit 2.53 times higher ON-current and subthreshold voltage swing of ~ 180 mV/decade, which is 50% lower than that of single-gate (SG)-driven a-IGZO TFTs. Here, through simulation and experimental results, we demonstrate that the use of DG-driven back-channel-etched a-IGZO TFTs with a top-gate offset structure enhances the switching speed of a-IGZO TFT-based circuits. In particular, fabricated SG-driven and DG-driven 11-stage ring oscillators exhibited respective oscillating frequencies of 334 and 781 kHz.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2014.2305665