High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
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| Veröffentlicht in: | IEEE electron device letters 2014-02, Vol.35 (2), p.175-177 |
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| container_end_page | 177 |
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| container_issue | 2 |
| container_start_page | 175 |
| container_title | IEEE electron device letters |
| container_volume | 35 |
| creator | WOOJIN CHOI OGYUN SEOK HOJIN RYU CHA, Ho-Young SEO, Kwang-Seok |
| description | |
| doi_str_mv | 10.1109/LED.2013.2293579 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2014-02, Vol.35 (2), p.175-177 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_28403203 |
| source | IEEE Xplore |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Deposition by sputtering Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 |
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