Highly conducting and wide-band transparent F-doped Zn1−xMgxO thin films for optoelectronic applications

•F-doped Zn1−xMgxO thin films were deposited using pulsed laser deposition.•The optimal amount of F doping can decrease the resistivity and broaden bandgap of Zn1−xMgxO thin films.•Zn1−xMgxO thin films can be applied as transparent electrodes. Fluorine (F) doped Zn1−xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn1−xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350°C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92×10−4Ωcm, with a carrier concentration of 5.26×1020cm−3, and a Hall mobility of 17.2cm2V−1s−1. The average optical transmittance is higher than 85% in the visible wavelength region.