A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques
A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band pass...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2014-01, Vol.62 (1), p.148-153 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 153 |
|---|---|
| container_issue | 1 |
| container_start_page | 148 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 62 |
| creator | Teppati, Valeria Benedickter, Hansruedi Marti, Diego Garelli, Marco Tirelli, Stefano Lovblom, Rickard Fluckiger, Ralf Alexandrova, Maria Ostinelli, Olivier Bolognesi, Colombo R. |
| description | A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W-band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented. |
| doi_str_mv | 10.1109/TMTT.2013.2292042 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_28149918</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6679301</ieee_id><sourcerecordid>1506386088</sourcerecordid><originalsourceid>FETCH-LOGICAL-c371t-f86874605c96d3dde904bdda32a08e73e5bc5de441377cb16d1a5482876c38913</originalsourceid><addsrcrecordid>eNo9kF1LwzAUhoMoOKc_QLzJjeBNZtKk-bjc5idMJ1jZZcmSU6x06Wy6yf69LRu7OhzO-z4HHoSuGR0xRs199pZlo4QyPkoSk1CRnKABS1NFjFT0FA0oZZoYoek5uojxp1tFSvUAvY_xApOJDR7PA1nYAho8dm25BTyrrScfm6rCn7vYwgpPbASP64Af6r9ApnXYQhPLbs_AfYfydwPxEp0VtopwdZhD9PX0mE1fyGz-_Dodz4jjirWk0FIrIWnqjPTcezBULL23PLFUg-KQLl3qQQjGlXJLJj2zqdCJVtJxbRgfors9d93U_d82X5XRQVXZAPUm5iylkmtJte6ibB91TR1jA0W-bsqVbXY5o3nvLu_d5b27_OCu69we8DY6WxWNDa6Mx2KimTCG9eybfa4EgONZSmV4h_sHu7t1bg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1506386088</pqid></control><display><type>article</type><title>A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques</title><source>IEEE Electronic Library (IEL)</source><creator>Teppati, Valeria ; Benedickter, Hansruedi ; Marti, Diego ; Garelli, Marco ; Tirelli, Stefano ; Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, Colombo R.</creator><creatorcontrib>Teppati, Valeria ; Benedickter, Hansruedi ; Marti, Diego ; Garelli, Marco ; Tirelli, Stefano ; Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, Colombo R.</creatorcontrib><description>A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W-band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2013.2292042</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Accuracy ; Active devices ; active-device measurements ; Applied sciences ; Availability ; Calibration ; Circuit properties ; Design. Technologies. Operation analysis. Testing ; Diffraction, scattering, reflection ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; HEMTs ; Integrated circuits ; load-pull ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Millimeter wave measurements ; nonlinear measurements ; Radiocommunications ; Radiowave propagation ; Real-time systems ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Telecommunications ; Telecommunications and information theory ; transistor measurement ; Transmission line measurements ; Uncertainty</subject><ispartof>IEEE transactions on microwave theory and techniques, 2014-01, Vol.62 (1), p.148-153</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-f86874605c96d3dde904bdda32a08e73e5bc5de441377cb16d1a5482876c38913</citedby><cites>FETCH-LOGICAL-c371t-f86874605c96d3dde904bdda32a08e73e5bc5de441377cb16d1a5482876c38913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6679301$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,4025,27928,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6679301$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28149918$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Teppati, Valeria</creatorcontrib><creatorcontrib>Benedickter, Hansruedi</creatorcontrib><creatorcontrib>Marti, Diego</creatorcontrib><creatorcontrib>Garelli, Marco</creatorcontrib><creatorcontrib>Tirelli, Stefano</creatorcontrib><creatorcontrib>Lovblom, Rickard</creatorcontrib><creatorcontrib>Fluckiger, Ralf</creatorcontrib><creatorcontrib>Alexandrova, Maria</creatorcontrib><creatorcontrib>Ostinelli, Olivier</creatorcontrib><creatorcontrib>Bolognesi, Colombo R.</creatorcontrib><title>A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W-band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented.</description><subject>Accuracy</subject><subject>Active devices</subject><subject>active-device measurements</subject><subject>Applied sciences</subject><subject>Availability</subject><subject>Calibration</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Diffraction, scattering, reflection</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HEMTs</subject><subject>Integrated circuits</subject><subject>load-pull</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Millimeter wave measurements</subject><subject>nonlinear measurements</subject><subject>Radiocommunications</subject><subject>Radiowave propagation</subject><subject>Real-time systems</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>transistor measurement</subject><subject>Transmission line measurements</subject><subject>Uncertainty</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOKc_QLzJjeBNZtKk-bjc5idMJ1jZZcmSU6x06Wy6yf69LRu7OhzO-z4HHoSuGR0xRs199pZlo4QyPkoSk1CRnKABS1NFjFT0FA0oZZoYoek5uojxp1tFSvUAvY_xApOJDR7PA1nYAho8dm25BTyrrScfm6rCn7vYwgpPbASP64Af6r9ApnXYQhPLbs_AfYfydwPxEp0VtopwdZhD9PX0mE1fyGz-_Dodz4jjirWk0FIrIWnqjPTcezBULL23PLFUg-KQLl3qQQjGlXJLJj2zqdCJVtJxbRgfors9d93U_d82X5XRQVXZAPUm5iylkmtJte6ibB91TR1jA0W-bsqVbXY5o3nvLu_d5b27_OCu69we8DY6WxWNDa6Mx2KimTCG9eybfa4EgONZSmV4h_sHu7t1bg</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>Teppati, Valeria</creator><creator>Benedickter, Hansruedi</creator><creator>Marti, Diego</creator><creator>Garelli, Marco</creator><creator>Tirelli, Stefano</creator><creator>Lovblom, Rickard</creator><creator>Fluckiger, Ralf</creator><creator>Alexandrova, Maria</creator><creator>Ostinelli, Olivier</creator><creator>Bolognesi, Colombo R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>201401</creationdate><title>A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques</title><author>Teppati, Valeria ; Benedickter, Hansruedi ; Marti, Diego ; Garelli, Marco ; Tirelli, Stefano ; Lovblom, Rickard ; Fluckiger, Ralf ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, Colombo R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-f86874605c96d3dde904bdda32a08e73e5bc5de441377cb16d1a5482876c38913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Accuracy</topic><topic>Active devices</topic><topic>active-device measurements</topic><topic>Applied sciences</topic><topic>Availability</topic><topic>Calibration</topic><topic>Circuit properties</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Diffraction, scattering, reflection</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>HEMTs</topic><topic>Integrated circuits</topic><topic>load-pull</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Millimeter wave measurements</topic><topic>nonlinear measurements</topic><topic>Radiocommunications</topic><topic>Radiowave propagation</topic><topic>Real-time systems</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>transistor measurement</topic><topic>Transmission line measurements</topic><topic>Uncertainty</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Teppati, Valeria</creatorcontrib><creatorcontrib>Benedickter, Hansruedi</creatorcontrib><creatorcontrib>Marti, Diego</creatorcontrib><creatorcontrib>Garelli, Marco</creatorcontrib><creatorcontrib>Tirelli, Stefano</creatorcontrib><creatorcontrib>Lovblom, Rickard</creatorcontrib><creatorcontrib>Fluckiger, Ralf</creatorcontrib><creatorcontrib>Alexandrova, Maria</creatorcontrib><creatorcontrib>Ostinelli, Olivier</creatorcontrib><creatorcontrib>Bolognesi, Colombo R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Teppati, Valeria</au><au>Benedickter, Hansruedi</au><au>Marti, Diego</au><au>Garelli, Marco</au><au>Tirelli, Stefano</au><au>Lovblom, Rickard</au><au>Fluckiger, Ralf</au><au>Alexandrova, Maria</au><au>Ostinelli, Olivier</au><au>Bolognesi, Colombo R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2014-01</date><risdate>2014</risdate><volume>62</volume><issue>1</issue><spage>148</spage><epage>153</epage><pages>148-153</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open-loop techniques in a cost-effective way: load reflection coefficients Γ L as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-terahertz frequencies, and W-band monolithic microwave integrated circuit design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-terahertz integrated circuits. First measurements performed on high-performance InP double heterojunction bipolar transistors and GaN high electron-mobility transistors are presented.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2013.2292042</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 2014-01, Vol.62 (1), p.148-153 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_28149918 |
| source | IEEE Electronic Library (IEL) |
| subjects | Accuracy Active devices active-device measurements Applied sciences Availability Calibration Circuit properties Design. Technologies. Operation analysis. Testing Diffraction, scattering, reflection Electric, optical and optoelectronic circuits Electronics Exact sciences and technology HEMTs Integrated circuits load-pull Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Millimeter wave measurements nonlinear measurements Radiocommunications Radiowave propagation Real-time systems Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Telecommunications Telecommunications and information theory transistor measurement Transmission line measurements Uncertainty |
| title | A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T04%3A01%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20W%20-Band%20On-Wafer%20Active%20Load-Pull%20System%20Based%20on%20Down-Conversion%20Techniques&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Teppati,%20Valeria&rft.date=2014-01&rft.volume=62&rft.issue=1&rft.spage=148&rft.epage=153&rft.pages=148-153&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2013.2292042&rft_dat=%3Cproquest_RIE%3E1506386088%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1506386088&rft_id=info:pmid/&rft_ieee_id=6679301&rfr_iscdi=true |