Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski-Krastanow growth : InAs on GaAs(0 0 1)

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Hauptverfasser:	RAMACHANDRAN, T. R, HEITZ, R, KOBAYASHI, N. P, KALBURGE, A, YU, W, CHEN, P, MADHUKAR, A
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
Online-Zugang:	Volltext
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ISSN:	0022-0248 1873-5002