Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE MoS2 stack

A new touch sensor device has been demonstrated with molybdenum disulfide (MoS2) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE). The performance of two device stack structures, metal/PVDF-TrFE/MoS2 (MPM) and metal/PVDF-TrFE/Al2O3...

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Veröffentlicht in:Nanotechnology 2013-11, Vol.24 (47), p.475501-475501
Hauptverfasser: Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun
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Sprache:eng
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Zusammenfassung:A new touch sensor device has been demonstrated with molybdenum disulfide (MoS2) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE). The performance of two device stack structures, metal/PVDF-TrFE/MoS2 (MPM) and metal/PVDF-TrFE/Al2O3 MoS2 (MPAM), were compared as a function of the thickness of PVDF-TrFE and Al2O3. The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al2O3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/47/475501