Efficiency and reliability of Fowler-Nordheim tunnelling in CMOS floating-gate transistors

Floating-gate transistors are increasingly used for digital and/or analogue non-volatile memory in standard CMOS integrated circuits. The mask design of the floating-gate's tunnelling junction, where erasure and/or writing occur, is examined. Aided by static and transient tunnelling current mea...

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Veröffentlicht in:	Electronics letters 2013-11, Vol.49 (23), p.1484-1486
Hauptverfasser:	Rumberg, B, Graham, D.W
Format:	Artikel
Sprache:	eng
Schlagworte:	analogue nonvolatile memory Applied sciences CMOS CMOS integrated circuits digital nonvolatile memory electric current measurement Electronics Exact sciences and technology FG transistors floating‐gate transistors Fowler‐Nordheim tunnelling integrated circuit reliability MOSFET oxide degradation minimisation power consumption minimisation random‐access storage Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor technology standard CMOS integrated circuits static tunnelling current measurements transient tunnelling current measurements Transistors tunnelling junction
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