Improved ON-State Reliability of Atom Switch Using Alloy Electrodes

Cu-alloy active-electrode coupled with Ru-alloy inert electrode is proposed to improve the ON-state reliability of nonvolatile Cu atom switch. The high rupture temperature (T r > 400 °C) of the nanometer-scale Cu bridge with high thermal resistance (R th ) is realized by the Cu(AlTi)-alloy withou...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-10, Vol.60 (10), p.3534-3540
Hauptverfasser:	Tada, Munehiro, Sakamoto, Toshitsugu, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu, Miyamura, Makoto
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atom switch Atomic layer deposition Bridge circuits Bridges Circuit properties Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electrodes Electronic circuits Electronics Exact sciences and technology field-programmable gate array (FPGA) Integrated circuits Integrated circuits by function (including memories and processors) Metals nonvolatile memory polymer programmable logic device (PLD) reconfigurable logic Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solid-electrolyte Switches Switching, multiplexing, switched capacity circuits Thermal stability
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Zusammenfassung:	Cu-alloy active-electrode coupled with Ru-alloy inert electrode is proposed to improve the ON-state reliability of nonvolatile Cu atom switch. The high rupture temperature (T r > 400 °C) of the nanometer-scale Cu bridge with high thermal resistance (R th ) is realized by the Cu(AlTi)-alloy without increasing programming current. The anti-Cu diffusive Ru(Ta) alloy contributes to improve the retention of the ON-state at 150 °C and endurance to > 10 4 cycles. The metallurgical prescription on the electrodes is a key to improve the stability of the nanometer-scale conducting bridge while keeping the switching power low.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2013.2275188