Evaluation of Electron Trapping Speed of AlGaN/ GaN HEMT With Real-Time Electroluminescence and Pulsed I―V Measurements : GaN ELECTRONIC DEVICES
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| Veröffentlicht in: | IEEE transactions on electron devices 2013, Vol.60 (10), p.3183-3189 |
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| container_end_page | 3189 |
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| container_issue | 10 |
| container_start_page | 3183 |
| container_title | IEEE transactions on electron devices |
| container_volume | 60 |
| creator | WAKEJIMA, Akio WILSON, Amalraj Frank MASE, Suguru JOKA, Takuya EGAWA, Takashi |
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| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2013, Vol.60 (10), p.3183-3189 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_27895874 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Charge transfer devices Electronics Exact sciences and technology Imaging devices Measurements common to several branches of physics and astronomy Metrology, measurements and laboratory procedures Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Time and frequency Transistors |
| title | Evaluation of Electron Trapping Speed of AlGaN/ GaN HEMT With Real-Time Electroluminescence and Pulsed I―V Measurements : GaN ELECTRONIC DEVICES |
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