Defect Engineering Using Bilayer Structure in Filament-Type RRAM

To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample...

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Veröffentlicht in:	IEEE electron device letters 2013-10, Vol.34 (10), p.1250-1252
Hauptverfasser:	Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Park, Sangsu, Lee, Sangheon, Park, Jaesung, Hwang, Hyunsang
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied sciences Bilayer defect engineering Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Hafnium compounds Integrated circuits Integrated circuits by function (including memories and processors) interface engineering low-power operation Random access memory Reliability Resistance resistive random access memory (RRAM) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches
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Beschreibung
Zusammenfassung:	To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2279009