Radiation Impact of EUV on High-Performance Ge MOSFETs

High-energy extremely ultraviolet (EUV)-induced Ge MOSFETs degradation is investigated. The degradation of threshold voltage, subthreshold swing (SS), and channel mobility is attributed to the generation of interface traps and oxide fixed charges. Much more severe degradation of SS and VT on n-FETs compared to p-FETs suggests that more interface defects in the upper half of Ge bandgap are generated by EUV radiation than in the lower half bandgap. The increase of interface trap is responsible for the mobility degradation of n-FETs due to Coulomb scattering.