Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma

Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the Electrochemical Society 1997-07, Vol.144 (7), p.2442-2447
Hauptverfasser: CHANG JU CHOI, YEO SONG SEOL, O SUNG KWON, BAIK, K.-H
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2447
container_issue 7
container_start_page 2442
container_title Journal of the Electrochemical Society
container_volume 144
creator CHANG JU CHOI
YEO SONG SEOL
O SUNG KWON
BAIK, K.-H
description
doi_str_mv 10.1149/1.1837834
format Article
fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_2774420</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2774420</sourcerecordid><originalsourceid>FETCH-LOGICAL-p182t-529914a03d6be7eea640867dccdbd132a823326b5cb76b4351da06bc7a900f6d3</originalsourceid><addsrcrecordid>eNpFjL1OwzAURi0EEqEw8AYeWNP62o6djFVFAamIATpX1z9pDIkTxe7A21MJJKZPR-foI-Qe2BJANitYQi10LeQFKaCRVakB4JIUjIEopargmtyk9HlGqKUuyP7V2w5jSAMdW5pP8ZiyjxTzONB2nAfMYYw0xH_ls-0M2i96SiEe6ftWrdYz7Xwf7LmcekwD3pKrFvvk7_52Qfbbx4_Nc7l7e3rZrHflBDXPZcWbBiQy4ZTx2ntUktVKO2udcSA41lwIrkxljVZGigocMmWsxoaxVjmxIA-_vxMmi307Y7QhHaY5DDh_H7jWUnImfgD8AVIL</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma</title><source>IOP Publishing Journals</source><creator>CHANG JU CHOI ; YEO SONG SEOL ; O SUNG KWON ; BAIK, K.-H</creator><creatorcontrib>CHANG JU CHOI ; YEO SONG SEOL ; O SUNG KWON ; BAIK, K.-H</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1837834</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of the Electrochemical Society, 1997-07, Vol.144 (7), p.2442-2447</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=2774420$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CHANG JU CHOI</creatorcontrib><creatorcontrib>YEO SONG SEOL</creatorcontrib><creatorcontrib>O SUNG KWON</creatorcontrib><creatorcontrib>BAIK, K.-H</creatorcontrib><title>Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma</title><title>Journal of the Electrochemical Society</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNpFjL1OwzAURi0EEqEw8AYeWNP62o6djFVFAamIATpX1z9pDIkTxe7A21MJJKZPR-foI-Qe2BJANitYQi10LeQFKaCRVakB4JIUjIEopargmtyk9HlGqKUuyP7V2w5jSAMdW5pP8ZiyjxTzONB2nAfMYYw0xH_ls-0M2i96SiEe6ftWrdYz7Xwf7LmcekwD3pKrFvvk7_52Qfbbx4_Nc7l7e3rZrHflBDXPZcWbBiQy4ZTx2ntUktVKO2udcSA41lwIrkxljVZGigocMmWsxoaxVjmxIA-_vxMmi307Y7QhHaY5DDh_H7jWUnImfgD8AVIL</recordid><startdate>19970701</startdate><enddate>19970701</enddate><creator>CHANG JU CHOI</creator><creator>YEO SONG SEOL</creator><creator>O SUNG KWON</creator><creator>BAIK, K.-H</creator><general>Electrochemical Society</general><scope>IQODW</scope></search><sort><creationdate>19970701</creationdate><title>Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma</title><author>CHANG JU CHOI ; YEO SONG SEOL ; O SUNG KWON ; BAIK, K.-H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p182t-529914a03d6be7eea640867dccdbd132a823326b5cb76b4351da06bc7a900f6d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHANG JU CHOI</creatorcontrib><creatorcontrib>YEO SONG SEOL</creatorcontrib><creatorcontrib>O SUNG KWON</creatorcontrib><creatorcontrib>BAIK, K.-H</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHANG JU CHOI</au><au>YEO SONG SEOL</au><au>O SUNG KWON</au><au>BAIK, K.-H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1997-07-01</date><risdate>1997</risdate><volume>144</volume><issue>7</issue><spage>2442</spage><epage>2447</epage><pages>2442-2447</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1837834</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 1997-07, Vol.144 (7), p.2442-2447
issn 0013-4651
1945-7111
language eng
recordid cdi_pascalfrancis_primary_2774420
source IOP Publishing Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Mechanism of tungsten atom formation in tungsten etchback using SF6/Ar helicon plasma
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T21%3A21%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanism%20of%20tungsten%20atom%20formation%20in%20tungsten%20etchback%20using%20SF6/Ar%20helicon%20plasma&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=CHANG%20JU%20CHOI&rft.date=1997-07-01&rft.volume=144&rft.issue=7&rft.spage=2442&rft.epage=2447&rft.pages=2442-2447&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1837834&rft_dat=%3Cpascalfrancis%3E2774420%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true