SiGe 135-GHz amplifier with inductive positive feedback operating near fmax

A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was − 5.8 dBm. The...

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Veröffentlicht in:	Electronics letters 2013-09, Vol.49 (19), p.1229-1230
Hauptverfasser:	Kim, Hyunchul, Yun, Jongwon, Song, Kiryong, Rieh, Jae-Sung
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology five‐stage D‐band amplifier frequency 135 GHz gain 12.2 dB Ge‐Si alloys HBT technology heterojunction bipolar transistors inductive positive feedback inductive positive feedback technique Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave technology millimetre wave amplifiers power 67.2 mW power consumption Radiocommunications SiGe size 0.18 mum Telecommunications Telecommunications and information theory
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Zusammenfassung:	A common base five-stage D-band amplifier developed in a 0.18-μm SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was − 5.8 dBm. The total chip area including pads is 1.54 × 0.56 mm2.
ISSN:	0013-5194 1350-911X 1350-911X
DOI:	10.1049/el.2013.1660