Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs: Selected extended papers from ULIS 2012 conference

Bibliographische Detailangaben

Veröffentlicht in:	Solid-state electronics 2013, Vol.88, p.9-14
Hauptverfasser:	SKLENARD, Benoit, BATUDE, Perrine, TAVERNIER, Clement, POIROUX, Thierry, RAFHAY, Quentin, MARTIN-BRAGADO, Ignacio, CUIQIN XU, PREVITALI, Bernard, COLOMBEAU, Benjamin, KHAJA, Fareen-Adeni, CRISTOLOVEANU, Sorin, RIVALLIN, Pierrette
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!