STI Crater Defect Reduction for Semiconductor Device Yield Improvement

STI Crater Defect Reduction for Semiconductor Device Yield Improvement

One type of yield killing defect called STI Crater is found on advanced CMOS devices during shallow trench isolation (STI) formation. The mechanism of the defect formation is discussed, and various cleaning and thermal treatment applications have been evaluated to eliminate the defects. We observe a...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing 2013-08, Vol.26 (3), p.335-338
Hauptverfasser: Li Liang, Rao Xue Song, Lu Wei, Alex, See
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
high aspect ratio process (HARP)
Integrated circuits
polymer removal
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shallow trench isolation (STI)
STI crater
yield enhancement
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Zusammenfassung:One type of yield killing defect called STI Crater is found on advanced CMOS devices during shallow trench isolation (STI) formation. The mechanism of the defect formation is discussed, and various cleaning and thermal treatment applications have been evaluated to eliminate the defects. We observe above 6% yield improvement with optimized cleaning process scheme.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2013.2267545