SiNx Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency by a Successive Ionic Layer Adsorption and Reaction Method

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Veröffentlicht in:	Journal of lightwave technology 2013-07, Vol.31 (13-16), p.2413-2418
Hauptverfasser:	SHEI, Shih-Chang, CHU, Ming-Hsuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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doi_str_mv	10.1109/JLT.2013.2266692
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source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	SiNx Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency by a Successive Ionic Layer Adsorption and Reaction Method
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