Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing

An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and r...

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Veröffentlicht in:	IEEE electron device letters 2013-08, Vol.34 (8), p.1041-1043
Hauptverfasser:	Shih, Jian-Yu, Chen, Yen-Chi, Chiu, Chih-Hung, Hu, Yu-Chen, Lo, Chung-Lun, Chang, Chi-Chung, Chen, Kuan-Neng
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D integration Applied sciences Bonding Capacitance Ceramics Circuit properties crystal resonator through-silicon via (TSV) Crystals Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Oscillators, resonators, synthetizers Reliability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Through-silicon vias
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Beschreibung
Zusammenfassung:	An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2265335