Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clari...

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Veröffentlicht in:	IEEE electron device letters 2013-08, Vol.34 (8), p.954-956
Hauptverfasser:	Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Nistor, Iulian, Rahimo, Munaf T., Arnold, Martin, Wikstroem, Tobias, Vobecky, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes Applied sciences Cathodes Electronics Exact sciences and technology Gate commutated thyristor Integrated circuit modeling Logic gates maximum controllable current Optoelectronic devices Other multijunction devices. Power transistors. Thyristors safe operating area Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling thyristor Thyristors wafer modeling
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