Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current

Gate Commutated Thyristor With Voltage Independent Maximum Controllable Current

In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clari...

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Veröffentlicht in:IEEE electron device letters 2013-08, Vol.34 (8), p.954-956
Hauptverfasser: Lophitis, Neophytos, Antoniou, Marina, Udrea, Florin, Nistor, Iulian, Rahimo, Munaf T., Arnold, Martin, Wikstroem, Tobias, Vobecky, Jan
Format: Artikel
Sprache:eng
Schlagworte:
Anodes
Applied sciences
Cathodes
Electronics
Exact sciences and technology
Gate commutated thyristor
Integrated circuit modeling
Logic gates
maximum controllable current
Optoelectronic devices
Other multijunction devices. Power transistors. Thyristors
safe operating area
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid modeling
thyristor
Thyristors
wafer modeling
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Beschreibung
Zusammenfassung:In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain the physics behind the high-power technology (HPT) GCT, to investigate what impact this design would have on 24 mm diameter GCTs, and to clarify the mechanisms that limit safe switching at different dc-link voltages. The 3-D simulation results show that the HPT design can increase the maximum controllable current in 24 mm diameter devices beyond the realm of GCT switching, known as the hard-drive limit. It is proposed that the maximum controllable current becomes independent of the dc-link voltage for the complete range of operating voltage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2267552