Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers

Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers

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Veröffentlicht in:IEEE transactions on electron devices 2013-08, Vol.60 (8), p.2592-2597
Hauptverfasser: ARASH ELHAMI KHORASANI, ALFORD, Terry Lynn, SCHRODER, Dieter K
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Sprache:eng
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Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 2597
container_issue 8
container_start_page 2592
container_title IEEE transactions on electron devices
container_volume 60
creator ARASH ELHAMI KHORASANI
ALFORD, Terry Lynn
SCHRODER, Dieter K
description
doi_str_mv 10.1109/TED.2013.2267209
format Article
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers
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