Growth of non-polar a-plane Zn1−xCdxO films by pulsed laser deposition
Non-polar Zn1−xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The effects of oxygen pressure on Cd content in the Zn1−xCdxO thin films are discussed. Single-phase Zn1−xCdxO thin films with a band gap of about 3.01eV at room temperature...
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Veröffentlicht in: | Journal of crystal growth 2013-07, Vol.375, p.104-107 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Non-polar Zn1−xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The effects of oxygen pressure on Cd content in the Zn1−xCdxO thin films are discussed. Single-phase Zn1−xCdxO thin films with a band gap of about 3.01eV at room temperature are achieved by incorporating 13at% Cd content. Based on the X-ray diffraction analysis, the Zn1−xCdxO films with Cd content below 7.2at% exhibit unique non-polar 〈112¯0〉 orientation, while the films with Cd content above 7.2at% present 〈0001〉 and 〈112¯0〉 mixed orientations. The surface of Zn1−xCdxO film with pure a-plane orientation shows highly anisotropic morphology with stripes elongated along the c-axis.
•Non-polar Zn1−xCdxO films with different Cd content were grown on r-plane sapphire.•The effects of oxygen pressure on Cd content in the Zn1−xCdxO films are discussed.•Nnique 〈112¯0〉 orientation of Zn1−xCdxO can be obtained with Cd content below 7.2at%.•Alloying Cd modulates the band gap of ZnO from 3.30 to 3.01eV at room temperature. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2013.04.028 |