A 0.41 μA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2013-04, Vol.48 (4), p.917-923 |
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| Sprache: | eng |
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| container_end_page | 923 |
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| container_issue | 4 |
| container_start_page | 917 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 48 |
| creator | MAEDA, Noriaki KOMATSU, Shigenobu MORIMOTO, Masao TANAKA, Koji TSUKAMOTO, Yasumasa NII, Koji SHIMAZAKI, Yasuhisa |
| description | |
| doi_str_mv | 10.1109/JSSC.2012.2237571 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 2013-04, Vol.48 (4), p.917-923 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_27368841 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Transistors |
| title | A 0.41 μA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS |
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