A 0.41 μA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of solid-state circuits 2013-04, Vol.48 (4), p.917-923
Hauptverfasser:	MAEDA, Noriaki, KOMATSU, Shigenobu, MORIMOTO, Masao, TANAKA, Koji, TSUKAMOTO, Yasumasa, NII, Koji, SHIMAZAKI, Yasuhisa
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Transistors
Online-Zugang:	Volltext
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