GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles

We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 e...

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Veröffentlicht in:	IEEE electron device letters 2013-04, Vol.34 (4), p.553-555
Hauptverfasser:	TSAI, Tsung-Ying, CHANG, Shoou-Jinn, WENG, Wen-Yin, SHUGUANG LI, SHIN LIU, HSU, Cheng-Liang, HSUEH, Han-Ting, HSUEH, Ting-Jen
Format:	Artikel
Sprache:	eng
Schlagworte:	Adsorption Applied sciences Au nanoparticle Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology field emission Gallium nitride GaN Gold Light emitting diodes Materials science Nanoparticles Nanoscale devices Nanoscale materials and structures: fabrication and characterization nanowires Other topics in nanoscale materials and structures Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface double layers, schottky barriers, and work functions Vacuum microelectronics X-ray scattering
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Zusammenfassung:	We report the adsorption of Au nanoparticles onto the surface of GaN nanowires (NWs) through photo-enhanced chemical reaction and the fabrication of GaN NW field emitters. With the adsorption of Au nanoparticles, it is found that threshold field and work function are reduced from 8.29 V/mm and 4.1 eV to 6.67 V/mm and 3.2 eV, respectively. These improvements could be attributed to the larger band distortion and more electrons accumulation so that more electrons could be emitted for the GaN NW field emitters with Au nanoparticles.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2013.2247558