Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric double-gate field-effect transistors in subthreshold regime is proposed, which is based on the parabolic approximation for the potential and removes previous limitations. Based on such a solution, a semi-a...

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Veröffentlicht in:	IEEE transactions on electron devices 2013-04, Vol.60 (4), p.1342-1348
Hauptverfasser:	Gnudi, A., Reggiani, S., Gnani, E., Baccarani, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Approximation methods Depletion-mode field-effect transistor (FET) double-gate field-effect transistor (DG FET) drain-induced barrier lowering (DIBL) Electric potential Electric, optical and optoelectronic circuits Electronics Exact sciences and technology inverse subthreshold slope (SS) junctionless field-effect transistor (JL FET) Logic gates Mathematical model Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Theoretical study. Circuits analysis and design Threshold voltage Transistors
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