Forming Kinetics in HfO2-Based RRAM Cells

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Veröffentlicht in:	IEEE transactions on electron devices 2013, Vol.60 (1), p.438-443
Hauptverfasser:	LORENZI, Paolo, RAO, Rosario, IRRERA, Fernanda
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_title	IEEE transactions on electron devices
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creator	LORENZI, Paolo RAO, Rosario IRRERA, Fernanda
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doi_str_mv	10.1109/TED.2012.2227324
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source	IEEE Electronic Library (IEL)
subjects	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Forming Kinetics in HfO2-Based RRAM Cells
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