Diamagnetic and Electrical Properties of SixMo2S3−x (x=0.1, 0.2, 0.33, 0.5) and A0.1Mo2S3−x (A=C, B, and Ru)

Mo 2 S 3 doped with Si, C, B, and Ru, is identified to bear the same crystalline structure P2 1 /m as that of Mo 2 S 3 through XRD analysis. Diamagnetic transitions with χ m ∼10 −4  emu/g Oe at temperature ranging from 2 K to 6 K were observed in the doped samples of Si x Mo 2 S 3− x ( x =0.1, 0.2,...

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Veröffentlicht in:Journal of superconductivity and novel magnetism 2013, Vol.26 (3), p.503-510
Hauptverfasser: Huang, G. T., Chao, W. H., Chang, J. K., Liao, H. D., Ling, D. C., Chien, F. Z., Wu, M. K.
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Sprache:eng
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Zusammenfassung:Mo 2 S 3 doped with Si, C, B, and Ru, is identified to bear the same crystalline structure P2 1 /m as that of Mo 2 S 3 through XRD analysis. Diamagnetic transitions with χ m ∼10 −4  emu/g Oe at temperature ranging from 2 K to 6 K were observed in the doped samples of Si x Mo 2 S 3− x ( x =0.1, 0.2, 0.33, 0.5). And both of the x =0.2 and 0.5 samples were found to have double diamagnetic transitions with higher T c at the same temperature of 6.01 K, while Si x Mo 2 S 3− x of x =0.33 displayed an extra ferromagnetic-like response at 63 K. The corresponding transition in resistivity of Si x Mo 2 S 3− x with x =0.1 was noticed to show a mild drop with less than 10 % of its original transition values as measured down to 2 K. But a superconducting-like magnetic field dependence on the phase transition of resistivity was also noted. Its diamagnetic signals were greatly reduced when the applied magnetic fields were raised to 10 3  Oes. In the doped samples of A 0.1 Mo 2 S 2.9 (A=C, B, and Ru), the phase transition in resistivity at 4.08 K, 4.62 K, and 4.35 K, respectively, exhibited similar fashion as that in the case of Si 0.1 Mo 2 S 2.9 .
ISSN:1557-1939
1557-1947
DOI:10.1007/s10948-013-2101-z