A Practical Approach to Enhance Yield of OPTVLD Products

In the prior art of the optimum variation lateral doping (OPTVLD) technique, the dose deviations between designs and products should be tightly controlled to achieve the eligible breakdown voltages (BVs); however, an approach presented in this letter overcomes this shortcoming without any penalty. Its physical explanation is discussed, and the simulations show that, through using this approach, the allowed dose-deviation range is relaxed from about ±1.5% to about ±5%, which can significantly enhance the yield over the existing state of the art. As a result, at an artificial dose-deviation rate of ±5 %, the OPTVLD products with the high yield of 94.4 % are first fabricated in the BiCMOS process, and the measured maximal BV of 1000 V corresponds very well to the ideal value of 1090 V.