Optimized Design of a 32-nm CNFET-Based Low-Power Ultrawideband CCII

CMOS technology faces significant challenges like tunneling effect, random dopant fluctuation, and line edge roughness at channel lengths below 45 nm. Carbon nanotube-based electronics seems to be a better prospect for extending the saturating Moore's law because of its higher mobility, scalability, and better channel electrostatics. This paper presents an optimum design of a wide bandwidth, high-performance carbon nanotube field-effect transistor (CNFET) realization of a dual-output second-generation current conveyor (CCII±) at a 32-nm technology node. The performance of the CCII module has been thoroughly investigated in terms of number of carbon nanotubes (CNTs), the diameter of CNT and inter-CNT pitch. The parameters of individual CNFET are then modified to further improve the performance. The performance of the optimum CNFET (ITOPT)-based CCII is then compared with CMOS at different supply voltages. It has been found that CNFET-based CCII provides excellent high-frequency response and also consumes lower power at scaled supply voltage compared with its CMOS counterpart.