Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are...

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Veröffentlicht in:	IEEE electron device letters 2012-12, Vol.33 (12), p.1714-1716
Hauptverfasser:	Oruc, F. B., Cimen, F., Rizk, A., Ghaffari, M., Nayfeh, A., Okyay, A. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied sciences Atomic layer deposition Atomic layer deposition (ALD) Charge carrier processes Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Flash memory Hysteresis Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Thin film transistors thin-film transistor (TFT) Transistors Zinc oxide ZnO
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Beschreibung
Zusammenfassung:	A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm 2 /V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the I drain - V gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2219493