Spontaneous formation of nanostructures in InxGa1-xAs epilayers grown by molecular beam epitaxy on GaAs non-(100)-oriented substrates

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Veröffentlicht in:	Japanese journal of applied physics 1997-03, Vol.36 (3B), p.1948-1954
Hauptverfasser:	VACCARO, P. O, FUJITA, K, WATANABE, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous semiconductors glasses Amorphous semiconductors glasses nanocrystalline materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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