A SiGe BiCMOS Transmitter/Receiver Chipset With On-Chip SIW Antennas for Terahertz Applications

This paper presents a terahertz (THz) transmitter (Tx) and receiver (Rx) chipset operating around 400 GHz in 0.13- μm SiGe BiCMOS technology. The Tx chip consists of a voltage-controlled oscillator, a buffer, a modulator, a power amplifier, a frequency tripler, and a substrate integrated waveguide (...

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Veröffentlicht in:IEEE journal of solid-state circuits 2012-11, Vol.47 (11), p.2654-2664
Hauptverfasser: Sanming Hu, Yong-Zhong Xiong, Bo Zhang, Lei Wang, Teck-Guan Lim, Minkyu Je, Madihian, M.
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Sprache:eng
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Zusammenfassung:This paper presents a terahertz (THz) transmitter (Tx) and receiver (Rx) chipset operating around 400 GHz in 0.13- μm SiGe BiCMOS technology. The Tx chip consists of a voltage-controlled oscillator, a buffer, a modulator, a power amplifier, a frequency tripler, and a substrate integrated waveguide (SIW) antenna. This antenna has an additional high-pass filtering characteristic to suppress the unwanted fundamental ( f 0 ) and second harmonic (2 f 0 ) signals by 50 and 30 dB, respectively. The Rx chip includes a proposed reconfigurable SIW antenna and a novel two-mode subharmonic mixer with ~ 5-dB reduction of conversion loss. The Rx chip consumes 50 nA from a 1.2-V supply. The measurement results of the Tx and Rx chips and a back-to-back test of the Tx/Rx chipset show the feasibility and pave the way of implementing a fully integrated THz system in silicon technology for mass production.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2012.2211658