Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n + /p/n + layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of >; 1 MA/cm 2 and high on/off current ra...

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Veröffentlicht in:	IEEE electron device letters 2012-10, Vol.33 (10), p.1396-1398
Hauptverfasser:	Srinivasan, V. S. S., Chopra, S., Karkare, P., Bafna, P., Lashkare, S., Kumbhare, P., Kim, Y., Srinivasan, S., Kuppurao, S., Lodha, S., Ganguly, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arrays Bipolar resistance RAM (RRAM) Design. Technologies. Operation analysis. Testing Diodes Doping Electronics Epitaxial growth Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) punchthrough Resistance selector Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Switches
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Zusammenfassung:	We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n + /p/n + layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of >; 1 MA/cm 2 and high on/off current ratio of >; 250 and >; 4700 (at opposite polarities) are observed. A switching speed of
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2209394