Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I - V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sam...

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Veröffentlicht in:	IEEE electron device letters 2012-10, Vol.33 (10), p.1387-1389
Hauptverfasser:	Jheng-Jie Huang, Ting-Chang Chang, Jyun-Bao Yang, Shih-Ching Chen, Po-Chun Yang, Yu-Ting Chen, Hsueh-Chih Tseng, Sze, S. M., Ann-Kuo Chu, Ming-Jinn Tsai
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Argon Design. Technologies. Operation analysis. Testing Electrodes Electronics Exact sciences and technology Gallium Gallium oxide Integrated circuits Integrated circuits by function (including memories and processors) nonvolatile resistance switching memory Random access memory Resistance resistance random access memory (RRAM) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Tin
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Zusammenfassung:	In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I - V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2012.2206365