Structure–Property Correlations in a Ce-Doped (Lu,Gd)2SiO5:Ce Scintillator
A full concentration range of Lu2x Gd2–2xSiO5 (LGSO:Ce) crystals was grown by the Czochralski method. Dependence of the scintillation properties on composition (x) in the range of solid solutions is established. It was determined that the LGSO:Ce scintillation yield increases in the range 0.3 < x...
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Veröffentlicht in: | Crystal growth & design 2012-09, Vol.12 (9), p.4411-4416 |
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Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A full concentration range of Lu2x Gd2–2xSiO5 (LGSO:Ce) crystals was grown by the Czochralski method. Dependence of the scintillation properties on composition (x) in the range of solid solutions is established. It was determined that the LGSO:Ce scintillation yield increases in the range 0.3 < x < 0.8 and reaches 29000 phot/MeV at 60% of Lu in the host (x = 0.6), and energy resolution improves up to 6.7% at 662 KeV. The observed light yield increase, surprisingly high Ce3+ segregation coefficients, improvement of energy resolution, and suppression of afterglow can be attributed to modification of both hot and thermalized diffusion of secondary electrons and holes induced by short-range separation in solid solution. The proposed approach can be valid for a wide range of mixed scintillation crystals and provides room for further improvement of their characteristics by isovalent substitution of host atoms. |
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ISSN: | 1528-7483 1528-7505 |
DOI: | 10.1021/cg300608t |