Increasing EMI Immunity in Novel Low-Voltage CMOS OpAmps

An easy solution to increase the immunity to electromagnetic interferences in recent low-voltage CMOS amplifiers is presented. It is based on a simple modification of the input stage, which can be fabricated in standard CMOS technologies and does not require extra mask levels, such as triple well, n...

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Veröffentlicht in:	IEEE transactions on electromagnetic compatibility 2012-08, Vol.54 (4), p.947-950
1. Verfasser:	Richelli, Anna
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties CMOS CMOS integrated circuits CMOS technology Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electromagnetic compatibility Electromagnetic interference Electromagnetics Electronic circuits Electronics Exact sciences and technology immunity to electromagnetic interferences Information, signal and communications theory Integrated circuits operational amplifier Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Telecommunications and information theory Topology Transistors
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Beschreibung
Zusammenfassung:	An easy solution to increase the immunity to electromagnetic interferences in recent low-voltage CMOS amplifiers is presented. It is based on a simple modification of the input stage, which can be fabricated in standard CMOS technologies and does not require extra mask levels, such as triple well, nor external components. Analysis and results are provided for very large interferences, arising from the input pin.
ISSN:	0018-9375 1558-187X
DOI:	10.1109/TEMC.2012.2206815