Influence of Surface Recombination on Forward Current―Voltage Characteristics of Mesa GaN p+n Diodes Formed on GaN Free-Standing Substrates

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2012-04, Vol.59 (4), p.1091-1098
Hauptverfasser:	MOCHIZUKI, Kazuhiro, NOMOTO, Kazuki, TSUCHIYA, Ryuta, NAKAMURA, Tohru, HATAKEYAMA, Yoshitomo, KATAYOSE, Hideo, MISHIMA, Tomoyoshi, KANEDA, Naoki, TSUCHIYA, Tadayoshi, TERANO, Akihisa, ISHIGAKI, Takashi, TSUCHIYA, Tomonobu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Diodes Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!